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以RuCl3.xH2O的水溶液为电沉积溶液,通过恒流电沉积法在钽箔上电沉积一层RuO2.nH2O薄膜,研究退火温度对RuO2.nH2O薄膜的电容性能的影响;采用CHI660B电化学测试仪和循环伏安法对薄膜的电容性能进行测试;分别采用扫描电子显微电镜、能谱仪及X射线衍射仪对薄膜的形貌和微孔形态、薄膜元素及薄膜的物相进行分析。结果表明,未经退火处理的RuO2.nH2O薄膜的电容性能不稳定,在循环伏安法测试中电容量随循环次数的增加而降低;将RuO2.nH2O薄膜分别在不同温度(100,150,200,250和300℃)下进行的2 h的退火处理,经退火处理后的RuO2.nH2O薄膜的电容性能经过60次的循环后趋于稳定,其中,经过100℃退火处理的RuO2.nH2O薄膜的比电容最大,其比电容为0.083 8 F/cm2。
RuCl3.xH2O aqueous solution as electrodeposition solution by constant current electrodeposition of tantalum foil electrodeposition RuO2.nH2O thin film to study the annealing temperature on the RuO2.nH2O thin film capacitance performance; using CHI660B electrochemical tester And cyclic voltammetry (CV) were used to test the capacitive properties of the films. Morphology, micropore morphology, thin-film elements and the phases of the films were analyzed by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. The results show that the dielectric properties of RuO2.nH2O films without annealing are not stable. The capacitance of RuO2.nH2O films decreases with the increase of the number of cycles in the cyclic voltammetry. The RuO2.nH2O thin films are annealed at different temperatures (100, 150, 200, 250 and 300 ℃) After 2 h of annealing, the annealed RuO2.nH2O thin films exhibited a stable capacitance after 60 cycles. The specific capacitance of RuO2.nH2O thin films annealed at 100 ℃ was the highest, The capacitance is 0.083 8 F / cm2.