论文部分内容阅读
原子层沉积(ALD)技术制备的薄膜在纳米尺度精确可控,并且各处薄膜厚度具有良好的均匀性。空间隔离原子层沉积(SALD)相比于时间隔离ALD技术,此工艺更易实现大面积基底沉积和连续沉积。由于SALD技术巨大的应用前景,关于SALD技术的研究成为ALD技术研究的热点之一。本文介绍了实验室自主设计搭建的SALD系统平台,以Al2O3生长评估SALD系统,实现Al2O3薄膜线性生长。并对反应温度、基底与前驱体喷头间距这两个重要的工艺参数进行了研究。SALD沉积实验表明,减小基底表面温度波动可以提高薄膜的微观形貌质量。同时,前驱体进气喷头与基底之间的距离会强烈影响基底表面的前驱体压力和前驱体间隔离效果,进而影响薄膜生长。为平衡薄膜生长均匀性和系统密封性的要求,需要选择最优的间距值。
Thin films prepared by atomic layer deposition (ALD) technology are precisely controllable at the nanoscale and have good uniformity of film thickness throughout. Space Isolation Atomic Layer Deposition (SALD) Compared to the time-segregated ALD technique, this process makes it easier to achieve large-area substrate deposition and continuous deposition. Due to the huge application prospect of SALD technology, research on SALD technology has become one of the hot topics in ALD technology research. This article introduces the SALD system platform independently designed by the laboratory to evaluate the SALD system with Al2O3 growth and achieve the linear growth of Al2O3 film. And the reaction temperature, substrate and precursor nozzle spacing of these two important process parameters were studied. SALD deposition experiments show that reducing the substrate surface temperature fluctuations can improve the film’s micro-topography quality. At the same time, the distance between the precursor inlet nozzle and the substrate strongly influences the precursor pressure on the substrate surface and the inter-precursor isolation effect, which in turn affects the film growth. In order to balance the requirements of film growth uniformity and system sealing, the optimal pitch value needs to be selected.