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本文研究了低温下半导体浅能级杂质的陷阱行为,计算结果表明:当补偿杂质浓度较高时,浅能级杂质将有明显的陷阱作用,并在10~(17)cm~(-3)时达到最大.在此基础上,本文讨论了浅能级杂质的陷阱行为对双极晶体管截上频率性能的影响.
In this paper, the trap behavior of shallow semiconductor impurities at low temperature is studied. The calculation results show that the trap of shallow level impurities will be obvious when the compensation impurity concentration is high, and at 10 ~ (17) cm ~ (-3) The maximum is reached.In this paper, we discuss the effect of shallow-level impurity trapping on the frequency performance of bipolar transistors.