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本文用俄歇电子能谱仪(AES)和X射线光电子能谱仪(XPS)研究半绝缘多晶硅(SIPOS)薄膜中硅的化学价态.通过对Si LVV俄歇谱谱线形状和位移以及Si(2p)芯态峰位移的分析,揭示了SIPOS膜是由元素Si、SiO和SiO_2组成.经过1100℃高温退火的SIPOS 膜经历了一个再结构过程——SiO_2成份增强和SiO向Si_2O_3的转变.
In this paper, the chemical valence of silicon in semi-insulating polysilicon (SIPOS) films was studied by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) (2p) core-state peak shift analysis reveals that the SIPOS film is composed of Si, SiO and SiO 2 elements.The SIPOS film annealed at 1100 ℃ undergoes a re-structure process - SiO 2 enhancement and SiO 2 Si 2 O 3 conversion.