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由于Nd3+离子半径0.112nm和Y3+离子半径0.101nm相差10.9%,使得Nd3+离子非常难于进入YAG晶体中。我们用温度梯度法生长了大尺寸高浓度(2.8 at%)的Nd:YAG晶体,同时与用提拉法Nd:GGG晶体进行了比较。分析了高浓度掺杂Nd:GGG和Nd:YAG晶体浓度猝灭问题。研究了不同浓度掺杂的猝灭效应。在同样的掺杂浓度下,我们发现它们的猝灭程度不同,其原因是两种晶体中ΔE(m is-)m和ΔE(m i s+)m不同。
Since the Nd3 + ion radius of 0.112 nm and the Y3 + ion radius of 0.101 nm differ by 10.9%, Nd3 + ions are very difficult to enter the YAG crystal. We have grown large, high-concentration (2.8 at%) Nd: YAG crystals by temperature gradient and compared them to Czochralski Nd: GGG crystals. The quenching of the concentration of Nd: GGG and Nd: YAG crystals with high concentration was analyzed. The quenching effect of doping at different concentrations was studied. At the same dopant concentration, we find that they quench to a different extent due to the different ΔE (m is-) m and ΔE (m i s +) m for both crystals.