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美国Cornell大学的研究人员正在试验一种新颖的铜淀积工艺,可为亚微米ULSI器件的制作提供方便.这是一种基于不用电方法的选择自对准、自动平面化工艺.用这种技术已制作出具有垂直侧壁的100nm宽铜线,其纵横比达到4:1;另一种是通过在中间层电介质中隐埋铜线形成全平面结构.通孔填充试验也正在进行,其目的是为通孔和金属线开发一种单一的铜淀积工艺. 非平面技术是先在硅片上蒸发一层基底金属,例如Pd/Ti或Au/Cr,用电子束蒸发的方法淀积30～50nm的金属层,接着涂覆PMMA抗蚀剂和用电子束光刻制作图形. 全平面技术这些步骤的顺序是颠倒的,即先在基片上制作CVD氧化层,再用PMMA和反应离子刻蚀(RIE)形成图形,然后才是蒸发基底金属,接着通过剥离工艺从未刻蚀的区域上除去金属.在非平面工艺中,用离子溅射法除去不需要的基底金属. 形成图形后,把片子浸入铜淀积槽中.淀积液含有硫酸铜水合物、甲醛、氰化物、表面活性剂及乙二胺四醋酸.
Researchers at Cornell University in the United States are experimenting with a novel copper deposition process that facilitates the fabrication of submicron ULSI devices, a self-aligning, automatic planarization process based on electroless methods. The technology has produced 100 nm wide copper lines with vertical sidewalls with an aspect ratio of 4: 1, and the other has a full planar structure by embedding copper wires in an interlayer dielectric. Through-hole filling experiments are also underway, The purpose is to develop a single copper deposition process for vias and metal lines, which is accomplished by evaporation of a layer of a base metal, such as Pd / Ti or Au / Cr, on a silicon wafer, by electron beam evaporation A 30-50 nm metal layer is deposited followed by a PMMA resist and patterning by electron beam lithography. Full planar technology The order of these steps is upside down by first forming a CVD oxide layer on the substrate and then using PMMA and reaction Ion etching (RIE) patterning is followed by vaporization of the base metal, followed by removal of the metal from the unetched area by a lift-off process In an in-plane process, unwanted base metal is removed by ion sputtering. After the film was immersed in copper deposition In. The deposition solution comprising copper sulfate hydrate, formaldehyde, cyanide, a surfactant and ethylenediaminetetraacetic acid.