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针对锗硅在形成金属锗硅化物时存在部分应力释放、界面形貌特性变差的问题,提出了在Si0.72Ge0.28上分别外延薄硅(Si)覆盖层和锗硅(Si0.72Ge0.28)缓冲层的工艺方案。实验结果表明,通过两步快速热退火,两个方案的工艺条件都能形成低阻的NiuPt1-uSivGe1-v和改善NiuPt1-uSivGe1-v/Si0.72Ge0.28的界面形貌。但相比较而言,在Si0.72Ge0.28上外延10 nm Si覆盖层的方案能够形成更好的NiuPt1-uSivGe1-v/Si0.72Ge0.28界面形貌。与没有改进的方案相比,该方案形成的肖特基接触更具有更低的肖特基接触势垒高度,更易形成欧姆接触。
In order to solve the problem that part of stress is released and the morphology of interface is degraded when germanium silicide is formed into germanium silicide, a thin Si layer and a Si0.72Ge0 layer are epitaxially grown on Si0.72Ge0.28, respectively. 28) buffer layer process options. The experimental results show that NiuPt1-uSivGe1-v with low resistance and interface morphology with NiuPt1-uSivGe1-v / Si0.72Ge0.28 can be formed by the two-step rapid thermal annealing. However, in comparison, the epitaxial growth of 10 nm Si over Si0.72Ge0.28 results in a better NiuPt1-uSivGe1-v / Si0.72Ge0.28 interfacial morphology. Compared with the unmodified solution, the schottky contact formed by this solution has a lower Schottky contact barrier height, making it easier to form ohmic contacts.