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介绍一种通过用电子全息方法测定GaN/AlGaN多量子阱结构生长极性的方法.该方法可以分别测量多量子阱结构中各层内建电场方向.由于多量子阱结构中的内建电场是由各层膜中的极化共同作用产生的,电场的方向和生长极性有确定的对应关系,所以通过测定内建电场的方向就可以确定结构的生长极性.还用会聚束电子衍射方法对电子全息方法的测定结果进行了验证.
A method for determining the growth polarities of a GaN / AlGaN multiple quantum well structure by using an electronic holography method is described, which can separately measure the directions of the built-in electric fields in the layers of the multiple quantum well structure. Since the built-in electric field in the multiple quantum well structure is Due to the interaction of the polarizations in each layer, the direction of the electric field and the growth polarity have a definite correspondence, so the growth polarity of the structure can be determined by measuring the direction of the built-in electric field. The electron beam diffraction The results of the electronic holography method were verified.