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Ｓｉ含量对溅射Ａｌ—Ｔａ—Ｓｉ合金薄膜电阻率的影响Ａｌ—２．３％Ｔａ—ｘ％Ｓｉ（ｘ＝０．８～３．６）和Ａｌ—２．３％Ｔａ合金（均为ｍｏｌ％），用磁控溅射法沉积在玻璃基板上形成１．０μｍ厚的薄膜。用四点探针法测其沉积态或经５２３～６７３Ｋ×１８～２５．...
Effect of Si Content on the Resistivity of Sputtered Al-Ta-Si Alloys The Al-2.3% Ta-x% Si (x = 0.8-3.6) and Al-2.3% Ta alloys mol%) was deposited on a glass substrate by magnetron sputtering to form a 1.0 μm-thick film. With the four-point probe method to measure the deposition state or by 523 ~ 673K × 18 ~ ...