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采用自主配制的碱性抛光液对TiO2薄膜进行了化学机械抛光(CMP),研究了在TiO2薄膜CMP加工过程中,碱性抛光液中的SiO2磨料、螯合剂、表面活性剂的体积分数和抛光液pH值对TiO2薄膜表面粗糙度的影响,并进行了参数优化。实验结果表明,在一定的抛光条件下,选用SiO2磨料体积分数为20%、螯合剂体积分数为1.0%、非离子表面活性剂体积分数为5.0%和pH值为9.0的碱性抛光液,抛光后TiO2薄膜表面没有划痕等抛光缺陷,表面粗糙度为0.308 nm,TiO2薄膜去除速率为24 nm/min,在保证抛光速率的同时降低了TiO2薄膜表面粗糙度,满足工业化生产要求。
The chemical mechanical polishing (CMP) of TiO2 thin films was carried out by using self-prepared alkaline polishing solution. The effects of polishing, polishing and polishing of SiO2 abrasive, chelating agent and surfactant in alkaline polishing solution during the CMP process of TiO2 thin films were studied. The effect of pH value on the surface roughness of TiO2 thin films was optimized and the parameters were optimized. The experimental results show that under certain polishing conditions, alkaline polishing solution with SiO2 abrasive volume fraction of 20%, chelating agent volume fraction of 1.0%, nonionic surfactant volume fraction of 5.0% and pH value of 9.0 is selected and polished The surface of TiO2 film has no scratches and other polishing defects, the surface roughness is 0.308 nm, the removal rate of TiO2 film is 24 nm / min, the surface roughness of the TiO2 film is reduced while the polishing rate is guaranteed, and the industrial production requirement is satisfied.