研究了以硫代乙酰胺、三乙醇胺、氯化亚锡和氨水作反应物,氯化铵作缓冲剂,采用化学浴法制备SnS薄膜的化学反应机理,分析了络合剂和氯化铵对反应的影响。结果表明,硫代乙酰胺和氯化亚锡主要为SnS薄膜的形成提供Sn2+与S2-,三乙醇胺作为络合剂可以维持溶液中Sn2+的浓度,氯化铵的加入可使反应液PH值在反应中平稳变化,有利于高品质薄膜的形成。 The chemical reaction mechanism of SnS thin films prepared by chemical bath was studied with thioacetamide, triethanolamine, stannous chloride and ammonia as reactants and ammonium chloride as buffer. The effects of complexing agent and ammonium chloride The impact of the reaction. The results showed that thioacetamide and stannous chloride mainly provided Sn2 + and S2- for the formation of SnS thin film. Triethanolamine as a complexing agent could maintain the concentration of Sn2 + in the solution. When adding ammonium chloride, the pH value of the reaction solution was Smooth changes in the reaction, is conducive to the formation of high-quality film.