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从模拟和实验两方面研究了SiGe/SiHBT发射结中pn结界面和SiGe/Si界面的相对位置对器件的电流增益和频率特性的影响 .发现两界面偏离时器件性能会变差 .尤其是当pn结位于SiGe/Si界面之前仅几十 就足以产生相当高的电子寄生势垒 ,严重恶化器件的性能 .据此分析了基区B杂质的偏析和外扩对器件的影响以及SiGe/Si隔离层的作用 .
The effects of the relative positions of the pn junction and the SiGe / Si interface on the current gain and frequency characteristics of SiGe / SiHBT emitter junctions are studied both in simulation and experiment, and it is found that the performance of the device deteriorates when the two interfaces deviate, especially when Only a few tens of pn junctions before the SiGe / Si interface are sufficient to produce a relatively high electron-parasitic barrier that seriously degrades the performance of the device, and the effect of segregation and outgrowth of the base B impurities on the device and SiGe / Si isolation The role of layers.