1983年日本的H.Itoh等首先将空气桥源MESFET应用于12GHz单片集成低噪声放大器,实现器件的单边接地。但是,由于器件采用叉指结构,无法采用斜蒸发工艺缩短栅长。1986年,南京电子器件研究所也研制成空气桥源MESFET。这种器件结构适合目前广泛采用的凹槽斜蒸栅工艺,有利于亚微米栅的制备,并已将该器件应用于X波段GaAs单片集成放大器电路。其测量性能见表Ⅰ。 In 1983, Japan’s H.Itoh first air-bridge MESFET application of 12GHz monolithic integrated low-noise amplifier, to achieve unilateral grounding device. However, due to the interdigitated structure of the device, the oblique evaporation process can not be used to shorten the gate length. In 1986, Nanjing Institute of Electronic Devices also developed air bridge MESFET. The structure of the device is suitable for the trench oblique raster process currently widely used, is conducive to the preparation of a submicron gate, and has been applied to the X-band GaAs monolithic integrated amplifier circuit. Its measurement performance is shown in Table I.