对使用超声搅拌和不加搅拌时 (10 0 )单晶硅的腐蚀特性进行了研究和对比 .使用超声搅拌 ,可以得到光滑的、无小丘的腐蚀表面 ,整个硅片腐蚀深度的误差不超过 1μm.实验结果表明 ,该方法可以有效地实现精密 KOH各向异性体硅腐蚀 The corrosion behavior of (100) single crystal silicon with ultrasonic agitation and without agitation was studied and compared.Using ultrasonic agitation, a smooth, hillock-free corrosion surface was obtained, and the error of corrosion depth of the entire silicon wafer did not exceed 1μm.The experimental results show that this method can effectively achieve the precise etching of KOH anisotropic bulk silicon