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研究了掺砷 SiO_2和掺砷 Ge/SiO_2扩散源的性质随卧式开管淀积箱中 O_2浓度的变化。氧化物中掺入 Ge 的作用是增加腐蚀速率,以及减少 AsH_3氧化时所引入的 As_2O_3。元素 As 在氧化物中进行扩散要比As_2O_3快得多,这就增加了跨越硅—氧化物交界面处 As 的输运。可以看到氧化物的予扩散 H_2退火产生类似的作用。由改变淀积箱中的 O_2浓度 Co_2来控制源的掺杂,扩散结果表明,其薄层电阻 Rs 是随(Co_2)~(-1)而变化。借助于氧化物中 As 的克分子数 C_(AS)~(sio)_2,则 Rs α(C_(AS)~(SiO_2))~(-2)。可看到对于 t≥40分时,Rs 是随时间按 t~-1/2减小。对于较短时间,由于 As 电激活部分表面浓度的变化,As 扩散变得复杂起来。分别表示了Si 中 As 扩散的各种分布,并借助于与扩散系数有关的浓度对扩散方程的介进行了讨论。然而,可以看到,在 H_2中的预退火引起随后扩散的 As 是有反常的电学分布。
The properties of arsenic-doped arsenic (SiO 2) -doped and arsenic-doped Ge / SiO 2 as-diffused source were investigated with the changes of O 2 concentration in a horizontal open-tube furnace. The role of Ge in the oxide is to increase the corrosion rate and to reduce As_2O_3 introduced during the oxidation of AsH_3. The element As diffuses in the oxide much faster than As 2 O 3, which increases the transport of As across the silicon-oxide interface. It can be seen that the oxide pre-diffusion H2 anneal produces a similar effect. The source doping was controlled by changing the O_2 concentration in the deposition tank. The diffusion results showed that the sheet resistance Rs varied with (Co_2) -1. With the help of the mole number of As in the oxide C AS ASio 2, then Rs α (C AS AS SiO 2) -2. It can be seen that for t ≥ 40 minutes, Rs decreases by t ~ -1/2 over time. For a shorter period of time, As diffusion becomes more complicated due to changes in the surface concentration of the As electroactive moiety. Respectively denote various distributions of As diffusion in Si and discussed the introduction of diffusion equation by means of concentration related to diffusion coefficient. However, it can be seen that pre-annealing in H 2 causes subsequent diffusion of As with anomalous electrical distribution.