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概述肖脱基势垒红外探测器为制造高度均匀的单片式红外电荷耦合器件(IRCCD)焦平面阵列提供了可能。在p型硅上,PtSi的势垒高度约为0.27电子伏,红外响应延伸到～4.6微米。资料[1～6]论证了PtSi的IRCCD的热成象,本文介绍热成象的测量结果,所测红外相机的单片硅焦平面采用肖脱基内光电发射二极管和CCD读出电路。制成了256元PtSi肖脱基势垒IRCCD线列和25×50元面阵;图1为线列的光学
Overview The Schottky barrier infrared detector offers the possibility of fabricating highly uniform monolithic IRCCD focal plane arrays. On p-type silicon, the barrier height of PtSi is about 0.27 electron volts and the infrared response extends to ~ 4.6 microns. Data [1 ~ 6] demonstrated the thermal imaging of PtSi IRCCD. This paper introduces the measurement results of thermal imaging. The monolithic silicon focal plane of the infrared camera used was Schottky photodiode and CCD readout circuit. Made of 256 yuan PtSi Schottky barrier IRCCD line array and 25 × 50 yuan area array; Figure 1 for the linear optical