旋转的悬浮区熔硅晶体的外部生长特性通常是正直的圆柱状。然而,向上的区熔的[111]无位错晶体,有时从圆柱状显示一个脊状的突出。此突脊的横截面约为1-2平方毫米,而且一直沿着整个晶体长度延伸,它并不搅乱晶格结构的排列。文内讨论了对于形成此“生长脊”的条件和原因,当无位错生长时,在(111)表面成核需要过冷。并讨论了固液交界面形态学和晶体生长动力学。 The outer growth characteristics of a rotating suspended zone fused silicon crystal are usually cylindrical. However, upwards zone melts [111] dislocation-free crystals, sometimes showing a ridged bulge from the cylinder. The ridge has a cross-section of about 1-2 mm2 and extends all along the length of the crystal without disturbing the alignment of the lattice structure. The text discusses the conditions and causes for forming this “growth ridge” where nucleation at the (111) surface needs to be subcooled without dislocation growth. The morphology and growth kinetics of the solid-liquid interface were also discussed.