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本发明公开了一种基于有机薄膜晶体管二氧化氮气体传感器的制备方法,包括以下步骤:先对衬底进行彻底清洗,清洗后干燥;在衬底的表面制备栅电极,形成栅电极的图形;在镀有栅电极的基板的上制备介电层;对形成的介电层进行紫外光辐射;在已形成栅电极,以及己覆盖经紫外光辐射的介电层的基板上制备有机半导体层;然后制备源电极和漏电极,形成源电极,漏电极图案,气体的响应率显著提升,探测浓度下限更低;相对单晶的晶体管,有机薄膜晶体管更容易制备,成本更低;基于界面修饰的有机薄膜晶体管将具有更快的响应速度,实现气体的快速检测;降低了生产成本,更适宜大规模产业化生产。
The invention discloses a preparation method of a nitrogen dioxide gas sensor based on an organic thin film transistor, which comprises the following steps: firstly cleaning the substrate thoroughly, cleaning and then drying; preparing a gate electrode on the surface of the substrate to form a pattern of a gate electrode; Preparing a dielectric layer on a substrate plated with a gate electrode; irradiating the formed dielectric layer with ultraviolet light; preparing an organic semiconductor layer on a substrate having a gate electrode and a dielectric layer that has been covered with ultraviolet radiation; Then the source electrode and the drain electrode are prepared to form the source electrode and the drain electrode pattern, the response rate of the gas is obviously raised and the lower detection concentration is lower; the organic thin-film transistor is easier to be prepared and the cost is lower according to the single-crystal transistor; Organic thin film transistor will have a faster response speed, to achieve rapid gas detection; reduce production costs, more suitable for large-scale industrial production.