Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays,in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated.The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide,which is called the radiation-induced narrow channel effect (RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon.The radiation-induced leakage currents under different drain biases are also discussed in detail.