【摘 要】
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Fluorescent-SiC(f-SiC),which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused
【机 构】
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Department of Materials Science and Engineering Meijo University,Department of Physics Chemistry and
论文部分内容阅读
Fluorescent-SiC(f-SiC),which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair(DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode(LED) stack,and leads to monolithic white LED device with suitable spectral property for general lighting applications.In this paper,we describe basic technologies of the white LED,such as optical properties of f-SiC substrate,and epitaxial growth of NUV stack on the f-SiC substrate.
Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode (LED) stack, and leads to monolithic white LED devices with suitable spectral properties for general lighting applications. In this paper, we describe basic technologies of the white LED, and epitaxial growth of NUV stack on the f-SiC substrate.
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