【摘 要】
：
用串列加速器提供的32S离子(能量160MeV,流强20nA)辐照厚度为20和50μm的聚酯膜。用不同的蚀刻溶液和敏化剂敏化过程,得到孔径为1和3μm的圆柱形和圆锥形的径迹孔。在红外区1
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用串列加速器提供的32S离子(能量160MeV,流强20nA)辐照厚度为20和50μm的聚酯膜。用不同的蚀刻溶液和敏化剂敏化过程,得到孔径为1和3μm的圆柱形和圆锥形的径迹孔。在红外区1.3～10.0μm波段测量反射率,在3.3～10.0μm波段反射率小于5%。
Polyester films of 20 and 50 [mu] m in thickness were irradiated with 32S ions provided by a tandem accelerator (energy 160 MeV, flow 20 nA). Sensitization with different etching solutions and sensitizers results in cylindrical and conical track apertures of 1 and 3 μm in diameter. The reflectivity was measured in the infrared region of 1.3 ~ 10.0μm, and the reflectivity was less than 5% in the wavelength range of 3.3 ~ 10.0μm.
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