用等离子体增强化学气相沉积 (PECVD)方法成功实现硅纳米线的掺B .选用Si片作衬底 ,硅烷 (SiH4 )作硅源 ,硼烷 (B2 H6 )作掺杂气体 ,Au作催化剂 ,生长温度 4 4 0℃ .基于气 液 固 (VLS)机制 ,探讨了掺B硅纳米线可能的生长机制 .PECVD法化学成分配比更灵活 ,更容易实现纳米线掺杂 ,进一步有望生长硅纳米线pn结 ,为研制纳米量级器件提供技术基础 Silicon nanowires were successfully doped with B by plasma enhanced chemical vapor deposition (PECVD) method. Si substrate was used as substrate, silane (SiH4) as silicon source, borane (B2 H6) as dopant gas and Au as catalyst. The growth temperature is 4400 ℃ .Based on the VLS mechanism, the possible growth mechanism of B-doped silicon nanowires is discussed. The composition of PECVD is more flexible and easier to realize the doping of nanowires and further to the growth of silicon nanowires Line pn junction, for the development of nano-scale devices provide the technical basis