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新型锗硅材料和器件的发展开创了硅异质结构和能带工程器件的新时代.现代先进的外延技术使应变层锗硅材料的应用成为可能.本文详细评述了新型锗硅应变层异质结构双极器件的研究现状及发展,着重讨论了锗硅应变层的性质和以锗硅应变层作基区的异质结双极器件的性能及其应用前景.
The development of new SiGe materials and devices has opened up a new era of silicon heterostructure and band-gap engineering devices.It is possible that modern advanced epitaxy technology makes the application of strain-layer SiGe material.This paper reviews in detail the new heterogeneity of SiGe strain- The research status and development of the structure bipolar devices are discussed, and the properties of the strain layers of germanium silicon and the heterojunction bipolar devices based on the germanium silicon strain layer as the base are discussed emphatically.