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对传统的SOI压阻式压力传感器进行了结构优化。目的是提高灵敏度,以满足在高温环境下大量程压力测量的实际需求。通过力学性能模拟,采用浅凸台结构来提高灵敏度和测量范围。分析并模拟了凸台厚度和形状对灵敏度的影响。得到了适合高温工作的掺杂浓度,压敏电阻的尺寸,金属引线的材料和布局。电阻放置在(σl-σt)最大的区域以保持灵敏度和线性度。采用U形电阻补偿在浅凸台制作过程中的工艺偏差对灵敏度的影响。有限元分析(FEA)表明,优化后的芯片结构可以测量10 MPa范围内的压力,灵敏度高达86.6 m V/(V·MPa),非线性误差在0.1%以下。和其他文献报道的大量程压力传感器相比,浅凸台芯片结构灵敏度和过载能力优异。
Traditional SOI piezoresistive pressure sensors were structurally optimized. The goal is to increase the sensitivity to meet the actual needs of large-scale pressure measurements in high temperature environments. Through the mechanical performance simulation, the use of shallow boss structure to improve the sensitivity and measurement range. The influence of the thickness and shape of the boss on the sensitivity was analyzed and simulated. The doping concentration suitable for high temperature operation, the size of the varistor, the material and layout of the metal leads are obtained. The resistor is placed in the area with the highest (σl-σt) to maintain the sensitivity and linearity. U-shaped resistor is used to compensate for the influence of process deviation on sensitivity in the process of making shallow bosses. Finite element analysis (FEA) shows that the optimized chip structure can measure the pressure in the range of 10 MPa, the sensitivity is up to 86.6 mV / (V · MPa) and the nonlinearity error is under 0.1%. Compared with the other large-scale pressure sensors reported in other literature, the shallow boss chip structure is superior in sensitivity and overload capability.