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采用分子束外延技术对δ掺杂GaAs/AlxGa1 xAs二维电子气(2DEG)样品进行了生长.在样品生长过程中,分别改变掺杂浓度(Nd)、空间隔离层厚度(Wd)和AlxGa1 xAs中Al组分(xAl)的大小,并在双温(300 K,78 K)条件下对生长的样品进行了霍尔测量;结合测试结果,分别对Nd,Wd及xAl与GaAs/AlxGa1 xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论.生长了包含有低密度InAs量子点层的δ掺杂GaAs/AlxGa1 xAs2DEG样品,采用梯度生长法得到了不同密度的InAs量子点.霍尔测量结果表明,随着InAs量子点密度的增加,GaAs/AlxGa1 xAs 2DEG的迁移率大幅度减小,实验中获得了密度最低为16×108/cm2的InAs量子点样品.实验结果为内嵌InAs量子点的δ掺杂GaAs/AlxGa1 xAs 2DEG的研究和应用提供了依据和参考.
The δ-doped GaAs / AlxGa1 xAs 2DEG samples were grown by molecular beam epitaxy.The doping concentration (Nd), space spacer thickness (Wd) and AlxGa1 xAs (X Al), and the Hall measurements were performed on the grown samples under the dual temperature (300 K, 78 K). According to the results of the test, Nd, Wd and xAl were compared with those of GaAs / AlxGa1 xAs 2DEG The carrier density and the mobility of the relationship between the law carried out a detailed analysis and discussion.A growth of a low-density InAs quantum dot layer containing δ-doped GaAs / AlxGa1 xAs2DEG samples were obtained by gradient growth of different density InAs Quantum dots.The results of Hall measurements show that the mobility of GaAs / AlxGa1 xAs 2DEG decreases with the increase of InAs quantum dot density, and the InAs quantum dots with the lowest density of 16 × 108 / The results provide the basis and references for the research and application of δ-doped GaAs / AlxGa1 xAs 2DEG with embedded InAs quantum dots.