Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap (3. 37 eV) and a large binding energy (60 meV) that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices. Indium-doped ZnO (ZnO:In) films have been investigated by many researchers. It has lower electrical conductivity and bet- Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap (3. 37 eV) and a large binding It has lower electrical conductivity and bet-energy (60 meV) that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices.