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射频电源作为微电子设备如刻蚀机、溅射台和PECVD等的核心部件,其性能的好坏直接关系到整个设备的性能。固态射频电源采用E类MOSFET功率放大器,通过适当的阻抗匹配网络,最终的射频电源在500 W的额定功率下,功率转换效率可以达到84%,微电子设备真空腔室内的等离子体启辉时,其阻抗变化范围很大且速度很快。目前匹配速度最快的MKS的自动匹配器(在允许匹配范围内匹配到50Ω时用时3~5 s)也很难实时跟上,所以固态射频电源必须能够承受500 W功率的反射至少3~5 s。经过实验后,本固态射频电源完全可以承受500 W功率的全反射30 s左右。
RF power as micro-electronics equipment such as etching machines, sputtering stations and PECVD and other core components, the performance is directly related to the performance of the entire device. The solid state RF power supply is powered by a Class E MOSFET power amplifier. With the proper impedance matching network, the final RF power supply achieves a power conversion efficiency of 84% at a rated power of 500 W. When plasma in a chamber of a microelectronics device is on, Its impedance range is wide and fast. It is also hard to keep up with the MKS automatic matchers that match the fastest currently (3 to 5 s when matched to 50Ω), so the solid-state RF power must be able to withstand a reflection of 500 W at least 3 to 5 s. After experiments, the solid state RF power can fully withstand the total reflection of 500 W power 30 s or so.