成功地利用传统的等离子增强化学汽相沉积技术制备了纳米晶硅。为了提高生长初期的结晶速度,在PECVD设备和干法刻蚀设备中,利用H2/SF6等离子体对Si Nx薄膜表面进行处理。在制备纳米/微米晶粒结晶硅时常用的氢气稀释条件下,沉积得到了纳米晶硅。利用XRD和TEM观察了氢化纳米晶硅(nc-Si∶H)的微结构,发现实验成功得到了小于10 nm的晶体硅。为了检测结构和电学特性,测试了纳米晶硅薄膜的亮态和暗态电导率。室温下,电导率从非晶硅的10-10S/cm增加到10-5S/cm。 Nanocrystalline silicon has been successfully prepared by the traditional plasma enhanced chemical vapor deposition technique. In order to improve the crystallization rate in the initial growth stage, the surface of Si Nx thin film was treated with H2 / SF6 plasma in PECVD equipment and dry etching equipment. In the preparation of nano / micron crystalline silicon commonly used in hydrogen dilution conditions, the deposition of nanocrystalline silicon. The microstructure of hydrogenated nanocrystalline silicon (nc-Si: H) was observed by XRD and TEM. It was found that crystalline silicon with less than 10 nm was successfully obtained. In order to test the structure and electrical properties, the bright and dark conductivity of nanocrystalline silicon thin films were tested. At room temperature, the conductivity increases from 10-10 S / cm of amorphous silicon to 10-5 S / cm.