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研究了在1700℃、Ar气氛下2D C/SiC-Mo反应偶的界面化学反应,利用XRD、EDS和SEM分析了反应界面的组成和微结构,讨论了界面反应机理;分析了反应偶材料热膨胀失配对界面残余应力的影响。结果表明:界面反应产物主要为Mo2C、Mo5Si3和Mo5Si3C,扩散路径可概括为Mo/Mo2C/Mo5Si3/Mo5Si3C/SiC;界面化学反应主要由元素的扩散控制,计算得出了在1700℃的扩散反应速率常数为1.05μm2/s;反应偶两种材料热膨胀系数的失配导致较大残余应力的产生,从而使反应界面在冷却后脱开。
The interfacial chemical reaction of 2D C / SiC-Mo reaction at 1700 ℃ under Ar atmosphere was studied. The composition and microstructure of the reaction interface were analyzed by XRD, EDS and SEM. The reaction mechanism was also discussed. The thermal expansion Effect of Mismatch on Residual Stress in Interface. The results show that the interfacial reaction products are mainly Mo2C, Mo5Si3 and Mo5Si3C, and the diffusion paths can be summarized as Mo / Mo2C / Mo5Si3 / Mo5Si3C / SiC. The interfacial chemical reaction is mainly controlled by the diffusion of elements, and the diffusion reaction rate at 1700 ℃ A constant of 1.05μm2 / s; the mismatch of thermal coefficient of expansion between the two materials leads to the generation of larger residual stress, which causes the reaction interface to detach after cooling.