采用硅工艺的反应离了刻蚀、各向异性化学腐蚀、热氧化和超低压化学气相淀积生长技术，成功地在硅单晶衬底上制作了ＳｉＯ２全封闭结构的硅量产线列阵．扫描电镜观察清楚地显示了这种高质量的量子线结构．实验表明，通过热氧化过程可以非常有效地控制量子线的尺寸． Silicon-based reaction has been completed using silicon etching process, anisotropic chemical etching, thermal oxidation and ultra-low pressure chemical vapor deposition growth technology, successfully fabricated on the silicon single crystal silicon substrate fully enclosed silicon production line array . Scanning electron microscopy clearly shows this high quality quantum wire structure. Experiments show that the quantum wire size can be controlled very effectively by the thermal oxidation process.