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本文对在(100)InP衬底上生长的晶格匹配的三元合金In_(0.53)Ga_(0.47)As的电子迁移率进行了研究,从理论上分析了影响电子迁移率的主要散射机构:极化光学声子散射,电离杂质散射,合金散射。并得出了有关结论。 半导体材料在低场下,平均漂移速度的大小与电场强度成正比,v_d=uε,迁移率的大小与温度、载流子浓度、材料的类别等有关,微观上则与各种散射因素相关,本文讨论的是在一定的温度区间(77～300K)、一定的杂质浓度(n～10~(16)cm~(-3))下,三元合金In_(0.53)Ga_(0.47)As的电子迁移率与几种主要的散射机构之间的关系。
In this paper, the electron mobility of the lattice-matched In_ (0.53) Ga_ (0.47) As ternary alloy grown on (100) InP substrate has been investigated. The main scattering mechanisms affecting the electron mobility have been analyzed theoretically: Polarized optical phonon scattering, ionized impurity scattering, alloy scattering. And draw the conclusion. In the low field, the average drift velocity is proportional to the electric field strength, v_d = uε. The mobility depends on the temperature, carrier concentration and the type of material, and is related to various scattering factors in the microscopic view. In this paper, we discuss the electronic structure of In 0.53 Ga 0.47 As As in a ternary alloy at a certain temperature range (77 ~ 300K) and a certain impurity concentration (n ~ 10 ~ (16) cm ~ (-3) The relationship between mobility and several major scattering mechanisms.