论文部分内容阅读
本文研究了P/P~+硅外延工艺中多种影响外延层电阻率的因素,并将研究结果应用于外延生长中,制备出电阻率均匀性,一致性好的外延片。图6,表3,参3。
In this paper, the factors affecting the resistivity of the epitaxial layer in the P / P ~ + silicon epitaxial process are studied. The results are applied to the epitaxial growth to prepare the epitaxial wafer with uniform resistivity and good uniformity. Figure 6, Table 3, reference 3.