借助于缩颈工艺用液封直拉法生长了无位错非掺杂 InP 晶体,生长时需要在固-液交界面附近有一个低的温度梯度。温度梯度为55℃/cm 时,能生长在<111>p 方向拉制的无位错晶体,其直径可达15mm。从晶体各部位切出的片子的腐蚀表面上均未观察到腐蚀坑(D 或 S 坑),这就认为晶体中不存在微缺陷。 The dislocation-free undoped InP crystal was grown by the necking process by means of a necking process, requiring a low temperature gradient near the solid-liquid interface during growth. When the temperature gradient is 55 ℃ / cm, dislocation-free crystals can be grown in the <111> p direction with the diameter up to 15mm. No etch pits (D or S-pits) were observed on the etched surfaces of the films cut out from the various parts of the crystal, which suggests that there are no micro-defects in the crystal.