本文介绍我们设计的一种二相埋沟离子注入势垒、行间转移型的150×150元CCD面阵摄象器件,并将这种器件与已研制成的三相三层多晶硅帧转移型面阵器件从原理、结构、性能、工艺等方面作了比较;该器件的版图结构,预计在转移效率、工作频率、摄象清晰度等性能有较大的改进,但在工艺上要求有高精度的离子注入、高精度的大面积光刻、低压CVD生长多晶硅和氮化硅等工艺技术;最后给出了器件的驱动时钟波形。 In this paper, we introduce a two-phase buried implanted ion implantation barrier barrier, inter-line transfer of 150 × 150 CCD area array camera device, and this device has been developed into a three-phase three-layer polysilicon frame transfer type Area array devices are compared from the principle, structure, performance, technology and other aspects; the layout structure of the device is expected to have greater improvements in transfer efficiency, operating frequency, camera sharpness and other properties, but the process requires a high Precision ion implantation, high-precision large-area lithography, low-pressure CVD growth polycrystalline silicon and silicon nitride and other technology; Finally, the device driver clock waveform.