论文部分内容阅读
本文提出并论证了一种新型异质结InGaAsP/InP激光器,即双载流子限制异质结(DCC-异质结)激光器的工作。这种激光器是通过在普通的InGaAsP/InP双异质结激光器的p-InP包层中嵌入一个p-InGaAsP第二势阱层的方法制作的。对于这种激光器获得了极好的阈值电流温度稳定性[当阈值电流随exp(T/T_0)变化时,在20°～100℃的温度范围内T_0是180K],并且得到了很高的外微分量子效率(在100℃时大于45％)。垂直于结平面的光束发散角也有很大改善(小于25°)。
This paper presents and demonstrates the work of a new heterojunction InGaAsP / InP laser, namely a dual-carrier confinement heterojunction (DCC-heterojunction) laser. This laser is fabricated by embedding a p-InGaAsP second potential well in the p-InP cladding of a conventional InGaAsP / InP double heterostructure laser. An excellent threshold current temperature stability was obtained for this laser [T_0 is 180K over a temperature range of 20 ° -100 ° C when the threshold current changes with exp (T / T_0)], and a very high outside Differential quantum efficiency (greater than 45% at 100 ° C). The beam divergence angle perpendicular to the junction plane is also greatly improved (less than 25 °).