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利用近似函数法对Co－Cr合金薄膜的衍射线线形进行分析，并提出用“三线法”确定衍射线的函数类型及其积分宽度，由此可计算薄膜的晶粒尺寸和微观应变。理论计算和实验表明，“三线法”结合近似函数法在线形分析方面是简便、可靠的。通过分析Co－Cr膜在不同工艺条件下（膜厚、Ar工作气体压强和负偏压）的衍射线线形，发现衍射线的物理展宽（即有效晶粒尺寸的减小）与晶粒取向度的下降是相对应的。晶粒取向度的下降与结构缺陷密度的增大有关。负偏压溅射时由于Ar原子残留在膜内引起晶格膨胀，从而使微观应变有较大增加。
The diffraction line shape of the Co-Cr alloy thin film was analyzed by the approximate function method, and the function type and integral width of the diffraction line were determined by the “three-line method”. Thus, the grain size and the micro-strain of the thin film can be calculated. Theoretical calculations and experiments show that the “three-line method” combined with the approximate function method in the linear analysis is simple and reliable. By analyzing the diffraction line shape of the Co-Cr film under different process conditions (film thickness, Ar working gas pressure and negative bias), it is found that the physical broadening of the diffraction line (ie, the decrease of the effective grain size) and the degree of grain orientation The decline is the corresponding. Decline in the degree of grain orientation and structural defect density increases. Negative bias sputtering due to residual Ar atoms in the film caused by lattice expansion, so that a greater increase in micro-strain.