p型栅结构氮化镓基高电子迁移率晶体管结构优化

来源 :南通大学学报:自然科学版 | 被引量 : 0次 | 上传用户：arksh

【摘要】

：

为了简化后期栅极驱动电路设计、降低成本,工业界对增强型高电子迁移率晶体管的需求与日俱增。采用p型栅结构制备增强型器件的方法是目前极有前景的一种增强型方法。该方法致力于提高器件的正向阈值电压和输出饱和电流,通过Silvaco TCAD软件调节AlGaN势垒层厚度及其Al组分,仿真器件转移特性曲线和输出特性曲线。将AlGaN势垒层厚度优化为20 nm,Al组分优化为0.27,使器件具有更大的阈值电压和输出饱和电流。并通过仿真器件能带结构和AlGaN/GaN沟道中电子浓度,进一步分析器件结构影响其性能的物理机制

【作者】

：

葛梅李毅王志亮朱友华

【机构】

：

南通大学信息科学技术学院

【出处】

：

南通大学学报:自然科学版

【发表日期】

：

2021年2期

【关键词】

：

p型栅氮化镓高电子迁移率晶体管仿真

【基金项目】

：

国家自然科学基金项目(61874168,62004109),南通市科技计划项目(JC2019006)。

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p型栅结构氮化镓基高电子迁移率晶体管结构优化

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