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提出了一种新型的凹源结构场效应晶体管(简称RSFET). 对RSFET进行了二维计算机模拟,并与其它结构的场效应晶体管进行了比较.
A novel concave-source field-effect transistor (referred to as RSFET) is proposed.The two-dimensional computer simulation of RSFET is carried out and compared with other field effect transistors.