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以氯化锶,硝酸铋和钛酸丁酯为原料,柠檬酸为络合剂,乙二醇为交联剂,无水乙醇为钛酸丁酯的溶剂,盐酸为硝酸铋的溶剂,去离子水为氯化锶的溶剂,配制了稳定的SrBi4Ti4O15(SBTi)前驱液.采用溶胶凝胶工艺,在Pt/Ti/SiO2/Si基片上制备了a轴取向增强的SBTi铁电薄膜.研究了一次性晶化快速退火工艺、两层晶化快速退火工艺、逐层晶化快速退火工艺以及成膜次数对薄膜结晶性、微观结构和生长行为的影响.实验结果表明,逐层快速退火工艺可有效抑制焦绿石相的形成;随着涂覆次数的增加,薄膜的结晶性变好;由于SBTi晶体生长的各向异性及单层膜厚对晶体沿(119)方向生长的限制,随着涂覆次数的增加,SBTi薄膜(119)峰和(200)峰的强度逐渐增大,而(00l)峰的强度反而略有减小,从而使I(200)/I(119),I(200)/I(0010),I(119)/I(0010)逐渐增大.
Using strontium chloride, bismuth nitrate and butyl titanate as raw materials, citric acid as a complexing agent, ethylene glycol as a crosslinking agent, anhydrous ethanol as a solvent for butyl titanate, hydrochloric acid as a solvent for bismuth nitrate, deionization Water as a solvent of strontium chloride, a stable SrBi4Ti4O15 (SBTi) precursor solution was prepared.The a-axis oriented SBTi ferroelectric thin films were prepared on the Pt / Ti / SiO2 / Si substrate by sol- Crystallization rapid annealing process, two-layer crystallization rapid annealing process, rapid crystallization layer by layer annealing process and the number of filming on the film crystallinity, microstructure and growth behavior of the experimental results show that the layer by layer rapid annealing process can be effective The growth of the pyrochlore phase is inhibited; the crystallinity of the film becomes better with the increase of the coating times; due to the anisotropy of the growth of the SBTi crystal and the growth of the single-crystal film along the (119) direction, (119) peak and (200) peak intensity gradually increase, but the intensity of (00l) peak decreases slightly, so that the ratio of I200 / I119 / I200 / I (0010), I (119) / I (0010) gradually increase.