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We report the latest results of the 3C-SiC layer growth on Si(100)substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD)system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity(σ/mean)of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.
We report the latest results of the 3C-SiC layer growth on Si (100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapor deposition (HWLPCVD) system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity (σ / mean) of ~ 3.40% and ~ 5.37% have been achieved in the 3 × 50 mm configuration. With a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 4% and 4.24%, respectively.