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利用低压金属有机物化学气相沉积方法在Al2 O3 /Si( 0 0 1 )衬底上制备出了六方结构的GaN单晶薄膜 .厚度为 1 .1 μm的GaN薄膜的 ( 0 0 0 2 )X射线衍射峰半高宽是 72arcmin ,薄膜的玛赛克 (mosaic)结构是X射线衍射峰展宽的主要原因 .室温下GaN光致发光谱的带边峰位于 36 5nm .
A hexagonal GaN single crystal thin film was deposited on a Al 2 O 3 / Si (0 0 1) substrate by a low pressure metal organic chemical vapor deposition method. The (0 0 0 2) X-ray The FWHM of the diffraction peak is 72arcmin, and the mosaic structure of the film is the main reason for the broadening of the X-ray diffraction peak. The band edge peak of GaN photoluminescence at room temperature is located at 365nm.