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针对C/SiC低温氧化易失效的不足,研究了CVI B-C基体改性2D C/SiC在700℃湿氧中100MPa下加载至60h的氧化行为,利用SEM和TEM观察了改性材料不同服役时间的微结构特征,揭示了演变规律.研究表明,CVI B-C基体改性使C/SiC低温抗氧化能力显著提升.基体裂纹及其在应力加载下的开裂均为氧化气体提供进入通道,而后可被B-C氧化产物B2O3封填,抑制内部C消耗.CVI B-C与其氧化产物一同参与缺陷愈合.在60h内,B-C改性层愈合能力尚未完全发挥,可服役更长时间.
In order to deal with the deficiency of C / SiC low temperature oxidation failure, the oxidation behavior of CVI BC matrix modified 2D C / SiC loaded in 100 ℃ wet oxygen at 700 ℃ for 60h was studied. SEM and TEM were used to observe the change of service life The results show that the modification of CVI BC matrix significantly enhances the low temperature oxidation resistance of C / SiC. The matrix cracks and the cracking under stress loading are the channels through which the oxidizing gas is supplied into the channel and can then be oxidized by BC Oxidation product B2O3 encapsulated, inhibiting the consumption of internal C. CVI BC with its oxidation products involved in defect healing in 60h, BC modified layer healing capacity has not yet been fully used, can be served for a longer period of time.