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在经过退火处理、载流子浓度为2×10~(17)厘米~(-3)、迁移率为2.3×10~4厘米~2·伏叫~(-1)·秒~(-1)叫的块状Pb_(0.8)Sn_(0.2)Te 材料上,通过蒸发厚度为几百埃的铟层,然后再经温度在100—200℃范围的短时间热处理,已制成了在77°K 工作、敏感红外辐射达11微米的平面光电二极管列阵。用这种工艺所制成的光电二极管具有峰值探测率2×10~(10)厘米·赫~(1/2)·瓦~(-1),其结面积与零偏压电阻的乘积为0.8欧姆·厘米~2,量子效率为45%。本文介绍器件的特性及制备详情。
After annealing, the carrier concentration is 2 × 10 ~ (17) cm ~ (-3) and the mobility is 2.3 × 10 ~ 4cm ~ 2 · V ~ (-1) · s ~ (-1) Called bulk Pb_ (0.8) Sn_ (0.2) Te, by evaporating an indium layer with a thickness of several hundred angstroms and then heat-treating it at a temperature in the range of 100 to 200 ° C for a short period of time at 77 ° K Working, sensitive infrared radiation up to 11 micron planar photodiode array. The photodiode fabricated by this process has a peak detection rate of 2 × 10 ~ (10) cm · Hz ~ (1/2) · W -1 and the product of its junction area and zero bias resistance is 0.8 Ohm · cm ~ 2, quantum efficiency of 45%. This article describes the device features and preparation details.