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为了合理地设计光学系统以整形激光二极管出射光束,必须准确了解激光二极管的远场分布,然而对于大功率激光二极管仍没有形式简单并且较好反映实际器件特性的光束模型。基于亥姆霍兹方程的严格远场解,提出使用两个离心高斯光束描述场源处平行结平面方向的模式场分布,将其代入严格远场解中得到一种描述大功率激光二极管远场光分布模型,用于描述其双峰远场结构。理论模型与三种实际器件的测量数据进行了比较,曲线主要部分都能很好吻合,并且偏差部分的能量仅占总能量的1%~2%。该模型数学表达形式简单,可以方便地用于研究光束经光学系统后的变换,以及计算光学系统的耦合效率,而且对于定量设计光学整形系统十分有用。
In order to rationally design the optical system to shape the laser diode exit beam, the laser diode far-field distribution must be accurately understood. However, for high-power laser diodes there is still no beamforming model that is simple in form and better reflects the actual device characteristics. Based on the strict far-field solution of the Helmholtz equation, two centrifugal Gaussian beams are proposed to describe the mode field distribution in the direction parallel to the plane junction of the source. A far-field Light distribution model, used to describe its bimodal far-field structure. The theoretical model is compared with the measurement data of the three actual devices. The main part of the curve can be well fitted, and the energy of the deviation part accounts for only 1% -2% of the total energy. The mathematical expression of the model is simple and can be easily used to study the transformation of the light beam after the optical system and the coupling efficiency of the optical system, and is very useful for the quantitative design of the optical shaping system.