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提出了一种CMOS宽带正交直接变频下变频器,片上集成了正交本振相位发生器。混频器采用三段式结构,包括跨导级、开关级和跨阻级作为输出级。跨导级采用互补型结构,在相同的功耗下获得更大的跨导。混频器核心电路未采用电感,能实现在宽频率范围内工作。芯片采用0.18μm CMOS工艺实现,整个变频器在1.8V电源电压下抽取29mA电流。仿真结果显示,在0.8～2.1GHz的频率范围内,下变频器在2MHz的中频带宽上实现了13dB的电压转换增益。双边带噪声系数为13.5dB,1/f转折频率小于300kHz。下变频器在1MHz中频处的IIP3值达7dBm。
A CMOS wideband orthogonal frequency down-converter is proposed. Orthogonal local oscillator phase generator is integrated on chip. The mixer uses a three-stage structure, including transconductance stage, switching stage and transimpedance stage as the output stage. The transconductance stage adopts a complementary structure to obtain a larger transconductance under the same power consumption. The mixer core circuit does not use inductors, can work in a wide frequency range. The chip adopts 0.18μm CMOS technology to realize, the whole frequency converter draws 29mA electric current under 1.8V power supply voltage. Simulation results show that in the frequency range of 0.8 ~ 2.1GHz, the down converter achieves 13dB voltage conversion gain at 2MHz IF bandwidth. The bilateral band noise figure is 13.5dB and the 1 / f corner frequency is less than 300kHz. The IIP3 value of the downconverter at 1MHz IF is 7dBm.