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利用液封凝固法(LEF)生长了不掺杂的半绝缘GaAs晶体,该法的工艺特点为晶体在B_2O_3液封层内生长。实验结果表明,与沿用的液封直拉法(LEC)相比位错密度可降低约1个数量级,电学宏观均匀性也有所改善。位错密度的降低可能会引起不掺杂的SI-GaAs晶体中主要电子陷阱性质的改变。
Undoped semi-insulating GaAs crystals were grown by Liquid Seal Solidification (LEF). The process is characterized by the growth of crystals in the B 2 O 3 liquid seal. The experimental results show that the dislocation density can be reduced by about one order of magnitude compared with the LEC, and the electrical macroscopic uniformity is also improved. A decrease in dislocation density may cause a change in the nature of the major electron traps in undoped SI-GaAs crystals.