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势垒厚度在２．５～５０ｎｍ ＡｌＡｓ／ＧａＡｓ隧道发射极ＨＢＴ的奇特电流增益近几年来，人们对用隧道势垒作为有效质量滤波器的兴趣越来越大。曾有人提出一种新型ＴＥＢＴ结构ＡｌＧａＡｓ／ＧａＡｓ双极晶体管。在这种结构中，由于其电子和空穴穿过势垒的几率有很大...
Peculiar current gain of AlAs / GaAs tunnel emitter HBT with barrier thickness of 2.5 ~ 50nm In recent years, there is growing interest in using tunneling barriers as effective mass filters. A new TEBT structure AlGaAs / GaAs bipolar transistor has been proposed. In this structure, the probability of electrons and holes crossing the barrier is very large