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利用同步辐射光电发射和铁磁共振(FMR)研究了Co/GaAs(100)界面形成以及Co超薄膜的磁性质.结果表明,在低覆盖度(约为02nm)下,Co吸附原子与衬底发生强烈的界面反应,在覆盖度为09nm时,形成稳定的界面.从衬底扩散出的Ga原子与Co覆盖层合金化,而部分As原子与Co原子发生反应,形成稳定的键合,这些反应产物都停留在界面处很窄的区域(03—04nm)内.另一部分As原子偏析在Co覆盖层表面.结合理论模型,详细地讨论了界面结构及Ga,As原子的深度分布.FMR结果表明,生长的Co超薄膜具有较好的单晶特性和化学均一性.
The Co / GaAs (100) interface formation and the magnetic properties of the Co-ultra-thin films were investigated by using synchrotron radiation photoelectron emission and ferro-magnetic resonance (FMR). The results show that at low coverage (about 0.2 nm), Co adsorbed atoms strongly interfacially react with the substrate, forming a stable interface when the coverage is 09 nm. The Ga atoms diffused from the substrate are alloyed with the Co cladding layer, and some As atoms react with Co atoms to form stable bonds, all of which stay in a narrow area at the interface (03-0 4nm). The other part of As atoms segregates on the surface of Co cladding. Combined with the theoretical model, the interface structure and the depth distribution of Ga and As atoms are discussed in detail. FMR results show that the growth of Co ultra-thin films have better single crystal properties and chemical homogeneity.