本文在分析了SPICE II-MOS2,MOS3模型中所存在的问题之后,重新建立了一个实用于电路模拟的微米级MOSFET解析模型──MOS5模型(本文仅限于介绍其开启电压模型部分).经实验证明,此模型适用于对不同工艺制得的各种尺寸增强型MOS管的开启电压模拟(L_(eff)≥1.0μm).与原SPICEII-MOS2,MOS3模型相比,此新模型具有参数简单易得、物理意义明确、以工艺参数为主等特点.此模型现已装入SPICE II程序中,达到了实用的目的,并可对VLSI设计与制造起一定的指导作用. After analyzing the problems existing in the SPICE II-MOS2 and MOS3 models, this paper re-establishes a micro-scale MOSFET analytical model that is useful for circuit simulation ──MOS5 model (this article is limited to introduce the open-voltage model part) It is proved that this model is suitable for the simulation of turn-on voltage (L eff (≥1.0μm)) of various size-enhanced MOSFETs fabricated by different processes. Compared with the original SPICEII-MOS2 and MOS3 models, this new model has simple parameters Easy-to-obtain, clear physical meaning and mainly process parameters, etc. The model has been loaded into the SPICE II program for practical purposes and can guide VLSI design and manufacture.