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为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi2/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi2/Si(100)纳米岛的电子和几何特性.结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM图像由三聚物形成的单胞构成,并在低偏压下STM图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异.
In order to understand the interaction between the semiconductor substrate and the oxide and the effect of the quantum size effect on different structures, TiSi2 / Si (100) nano-islands with atomic layer thickness were prepared and scanned using a scanning tunneling The electronic and geometric properties of TiSi2 / Si (100) nano-islands were investigated in detail by means of scanning electron microscopy (STM). The results show that the surface of these nano-islands exhibits obvious metallicity. : The STM image consists of a unit cell formed by a trimer at high bias and shows a close-packed pattern of the STM image at low bias. These different patterns reflect a significant difference in the density of states at different energy sites.